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Analysis of dielectric constants to determine sp³/sp² ratio and effect of substrate bias on spectroscopic ellipsometric studies of tetrahedral amorphous carbon films grown using an S bend filtered cathodic vacuum arc process

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Title Analysis of dielectric constants to determine sp³/sp² ratio and effect of substrate bias on spectroscopic ellipsometric studies of tetrahedral amorphous carbon films grown using an S bend filtered cathodic vacuum arc process
 
Creator Panwar, O S
Khan, Mohd Alim
Basu, A
Kumar, Satyendra
Kumar, Sushil
 
Subject Spectroscopic ellipsometry
Optical constants
FCVA, sp³/sp²
ta-C
Substrate bias
 
Description 141-148
The carbon bonding ratio and optical properties have been studied by spectroscopic ellipsometry of as grown tetrahedral amorphous carbon (ta-C) films, deposited using an S bend filtered cathodic vacuum arc (FCVA) process. First, the carbon bonding ratio in ta-C films has been estimated from imaginary part of dielectric constant (Ɛ₂) spectra obtained by spectroscopy ellipsometry. A method has been developed to find out the fractions of sp³ and sp² bonded carbon atoms from the Wemple-Didomenico plot. Second, the effect of varying negative substrate bias on the optical properties and sp³/sp² ratio of as-grown ta-C films has been made. The values of the optical constants evaluated are found to increase with the increase of the negative substrate bias in the as-grown ta-C films but the values of sp³/sp² ratio and the optical band gap (Eg) evaluated increase up to -200 V substrate bias and beyond -200 V substrate bias the values of sp³/sp² ratio and Eg decrease. Application of substrate bias is, thus, found to increase the sp³ bonding and Eg up to -200V substrate bias and beyond -200V substrate bias there is reversal of the trend.
 
Date 2009-02-18T10:03:43Z
2009-02-18T10:03:43Z
2009-02
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/3154
 
Language en_US
 
Publisher CSIR
 
Source IJPAP Vol.47(2) [February 2009]