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Annealing behaviour of GaAs implanted with 70 MeV 120Sn ions

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Title Annealing behaviour of GaAs implanted with 70 MeV 120Sn ions
 
Creator Ali, Yousuf P
Nair, Geeta
Narsale, A M
Chandrasekaran, K S
Arora, B M
 
Subject MeV implantation
Radiation defects
GaAs
 
Description 170-174
Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray diffraction (XRD) and electrical resistance measurements after annealing in the temperature range 373-823 K. XRD measurements for the
samples annealed up to 723 K show two peaks, one due to the substrate and another due to the implant damaged layer. The strain parameter from the measured separation between the substrate and layer peaks of several symmetric and asymmetric reflections after each annealing step has been calculated. Strain recovery occurs in two predominant annealing stages, one at about 500 K and the other at about 700 K. Temperature dependence (100-300 K) of resistance of these samples
indicates that electrical conduction in the samples annealed up to 723 K, is dominated by variable range hopping. Localized states density at the Fermi level N(EF), estimated from temperature dependence of sample resistance after each annealing step, shows two annealing stages similar to those observed from XRD measurements. Isothermal annealing carried
out at two different annealing temperatures (523 and 573 K) indicates the activation energy Ea = 0.16 eV for the first annealing stage.
 
Date 2009-03-23T07:14:03Z
2009-03-23T07:14:03Z
2009
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/3435
 
Language en_US
 
Publisher CSIR
 
Source IJPAP Vol.47(03) [March 2009]