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<strong>Characterization of nickel sulphide thin films prepared by modified chemical method</strong>

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Title Statement <strong>Characterization of nickel sulphide thin films prepared by modified chemical method</strong>
 
Added Entry - Uncontrolled Name Sonawane, Milind S; Department of Physics, P. S. G. V. P. M’S Arts, Science & Commerce College, Shahada, Dist- Nandurbar- 425 409 (M. S.) India.
Shinde, Mahendra S; Department of Physics, M.J.M. Arts, Science & Commerce College, Karanjali (Peth), Dist-Nashik - 422 208 (M. S.) India.
PATIL, RAJENDRA S; Department of Physics, P. S. G. V. P. M’S Arts, Science & Commerce College, Shahada, Dist- Nandurbar- 425 409 (M. S.) India.
 
Uncontrolled Index Term Nickel sulphide; Thin film; Chemical bath deposition; XRD; SEM; Optical properties; Electrical properties
 
Summary, etc. Semiconducting nickel sulphide (NiS) thin films were deposited onto glass substrates using a new modified chemical bath method (MCBD). The MCBD is the solutions grow technique in which substrates are immersed in cations and anions alternatively and film growth takes place on the substrates. The preparative conditions such as concentration, <em>p</em>H, temperature, immersion time, immersion cycles, etc are optimized to get nanocrystalline NiS films. The characterization of the films was carried out by using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity. The XRD analysis of the as-grown NiS films showed hexagonal structure. The average grain size is found to be 14 nm. Electrical resistivity measurements showed semiconducting nature with at room temperature resistivity which is found to be of the order of 10 Ωcm for as-deposited NiS films. Scanning electron micrographs (SEM) reveal a very dense surface structure with the presence of irregular shaped grain particles of size ~200 nm. The optical absorption studies show that the absorption coefficient of the NiS thin film is high and a direct band gap of ~2.4 eV has been observed.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2015-10-07 09:24:25
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/5207
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 53, ##issue.no## 10 (2015): Indian Journal of Pure & Applied Physics
 
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Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/5207/14617
 
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