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<strong>Role of Schottky-ohmic separation length on dc properties of Schottky diode</strong>

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Authentication Code dc
 
Title Statement <strong>Role of Schottky-ohmic separation length on dc properties of Schottky diode</strong>
 
Added Entry - Uncontrolled Name Chattopadhyay, P. ; University of Calcutta
Banerjee, A. ; Department of Electronic Science, University of Calcutta
 
Uncontrolled Index Term Planar Schottky barrier diode; Semiconductor surface potential; Barrier height; Ideality factor; Series resistance
 
Summary, etc. <strong>The effect of Schottky-ohmic separation length on the barrier height, ideality factor and device series resistance of Al-<em>p</em>-Si Schottky barrier diodes in planar configuration have been studied. It has been found that the ideality factor and series resistance of the device vary nonlinearly with Schottky-ohmic separation length. The effect seems to be more pronounced on the series resistance, which has been attributed to recombination processes at the defect states and non-ohmicity at the ohmic contact of the device. The fitting of the experimental data confirms our previous observations of a logarithmic voltage dependence of the series resistance of the device.</strong>
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2015-06-01 14:04:36
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/1354
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 52, ##issue.no## 3 (2014): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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