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<strong>Effect of uniform helium doping on the optical properties and laser damage performance of sapphire</strong>

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Title Statement <strong>Effect of uniform helium doping on the optical properties and laser damage performance of sapphire</strong>
 
Added Entry - Uncontrolled Name Zhong, Mian ; University of Electronic Science and Technology of China
Liao, Wei ; China Academy of Engineering Physics
xiang, xia ; University of Electronic Science and Technology of China
Yan, Zhong hua; University of Electronic Science and Technology of China
Yang, Liang ; University of Electronic Science and Technology of China
Yang, Gui xia; China Academy of Engineering Physics
Wu, Ju wei; University of Electronic Science and Technology of China
Zheng, Wan guo; China Academy of Engineering Physics
Yuan, Xiao dong; China Academy of Engineering Physics
the NSAF Joint Foundation of China
 
Uncontrolled Index Term Condensed Matter Physics
Sapphire; He ion implantation; absorption; luminescence; LIDT
 
Summary, etc. Sapphire samples have been implanted successively by helium ions with a series of energies to obtain a uniform layer of impurities in the range of 80-200 nm beneath the surface at room temperature. After helium ion implantation, the surface morphology has been greatly changed. In addition, two broad absorption bands at 360 nm and 780 nm are observed and their intensities significantly increase. An infrared band shifts from 782 cm<sup>-1</sup> to 760 cm<sup>-1</sup> and the band obviously broadens. Moreover, a luminescence band at 330 nm (3.8 eV) is associated with the 2P→1S* transition of the F<sup>+</sup> centers. After laser irradiation, the laser damage morphologies of samples before and after ion implantation are presented. An obvious degradation of laser induced damage threshold (LIDT) is observed and the mechanism for the degradation of LIDT is discussed.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2016-05-20 09:07:56
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/9678
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 54, ##issue.no## 5 (2016): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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