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<strong>The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes</strong>

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Title Statement <strong>The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes</strong>
 
Added Entry - Uncontrolled Name Gareso, Paulus Lobo; Hasanuddin University
Buda, Manuella ; Australian National University-ACT Canberra-Australia
Tan, Hark Hoe; Australian National University-ACT Canberra-Australia
Jagadish, Chennupati ; Australian National University-ACT Canberra-Australia
Hasanuddin University
 
Uncontrolled Index Term specific instrumentation and techniques of general use in physics
Inter diffusion; Photocurrent response; Stark shifts; Thermal annealing
 
Summary, etc. The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diode has been investigated using photoluminescence (PL), double-crystal X-ray diffraction (DCXRD), photo-response (PR) and lasing characteristic. X-ray measurement results show that there is an incorporation of carbon atom in lattice site of higly doped p<sup>++</sup> GaAs contact layer. The photocurrent spectra at room temperature reveal that the relative intensity of 1e-1hh transition of annealed samples is much higher than that of as-grown samples and the peak became narrow. Stark shifts are much higher for the samples after annealing in comparison to the as-grown samples and this has been attributed to a decrease of the confining potential due to thermal interdiffusion. Characteristic of laser diodes shows that there is no significant degradation of lasing parameters after annealing has been observed and it has been found that the threshold current of annealed laser diodes are approximately four times less than as-grown laser diodes and this has been attributed to the electrical activation of carbon.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2017-06-01 10:24:58
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/8952
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 55, ##issue.no## 5 (2017): Indian Journal of Pure & Applied Physics
 
Language Note en
 
Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/8952/24665
 
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