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<strong>Review on Se-and S-doped hydrogenated amorphous silicon thin films</strong>

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Authentication Code dc
 
Title Statement <strong>Review on Se-and S-doped hydrogenated amorphous silicon thin films</strong>
 
Added Entry - Uncontrolled Name Sharma, Sanjeev Kumar; Dongguk University-Seoul
Im, Hyunsik
Kim, Deuk Young
Mehra, R M
 
Uncontrolled Index Term Hydrogenated amorphous silicon; double donor; optical &amp; electrical properties; Conduction mechanism
 
Summary, etc. <strong>Hydrogenated amorphous silicon thin films manufactured by plasma deposition techniques are widely used in electronic and optoelectronic devices. The optical and electrical properties of undoped and doped hydrogenated amorphous silicon (a-Si:H) thin films determine the importance and characteristics of the final film structure of practical devices. In particular, a-Si:H thin film solar cells and optical sensors have many industrial and technical advantages, such as being light weight, low cost, and having a large deposition area. The a-Si:H thin film is one of the candidates for flexible solar cells for use in space. This article reviews the optical and electrical properties of double donor Se-and S-doped a-Si:H thin films, which can be considered as an alternative to wide bandgap absorbing layers in the next generation of optoelectronic devices.</strong>
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2015-06-02 14:35:11
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/2390
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 52, ##issue.no## 5 (2014): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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