<strong>Structural and electronic property calculations of InxGa1-xAs alloy based on all electron potentials from first-principle theory</strong>
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Title Statement |
<strong>Structural and electronic property calculations of InxGa1-xAs alloy based on all electron potentials from first-principle theory</strong> |
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Added Entry - Uncontrolled Name |
Pandey, Bramha Prasad; GLA University, Mathura Kumar, V ; ISM, Dhanbad |
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Uncontrolled Index Term |
GaAs, InAs semiconductors, InxGa1-xAs alloy, DFT, EOS, Local density approximation, Projector augmented, wave, First-principle calculation |
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Summary, etc. |
First-principle calculation has been performed to study the structural and electronic properties of binary GaAs and InAs semiconductors and their alloy In<sub>x</sub>Ga<sub>1</sub><sub>-x</sub>As using projector augmented wave (PAW) and PAW+U techniques, based on all electron (AE) potentials. The effect of composition <em>x</em> of indium (In) on equilibrium lattice constant (ɑ<sub>0</sub>), bulk modulus (<em>B</em><sub>0</sub>) and pressure derivative of bulk modulus (<em>B</em><sub>0</sub>') have been investigated using local density approximation (LDA), PAW and PAW+U techniques. The values of bandgap (<em>E</em><sub>g</sub>) of GaAs, InAs and In<sub>x</sub>Ga<sub>1</sub><sub>-x</sub>As have been calculated from these methods. The structural and electronic parameters ɑ<sub>0</sub>, <em>B</em><sub>0</sub> and <em>E</em><sub>g</sub> have been found to be nonlinear with alloy composition <em>x</em>. The calculated values are compared with the experimental values and the values reported by different researchers. A fairly good agreement has been obtained between them. |
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Publication, Distribution, Etc. |
Indian Journal of Pure & Applied Physics (IJPAP) 2016-01-11 09:49:15 |
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Electronic Location and Access |
application/force-download http://op.niscair.res.in/index.php/IJPAP/article/view/4795 |
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Data Source Entry |
Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 54, ##issue.no## 01 (2016): Indian Journal of Pure & Applied Physics |
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Language Note |
en |
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