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<strong>Effect of built-in-polarization field on mean free path of phonons in binary nitrides</strong>

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Title Statement <strong>Effect of built-in-polarization field on mean free path of phonons in binary nitrides</strong>
 
Added Entry - Uncontrolled Name Sahoo, Sushant Kumar; Department of Physics, KIIT University, Bhubaneswar-751024, Odisha, India
Swain, Muralidhar ; Department of Physics, KIIT University, Bhubaneswar-751024, Odisha, India
Sahoo, Bijay Kumar; Department of Physics, National Institute of Technology, Raipur-492010, CG, India
 
Uncontrolled Index Term Binary nitrides; Built-in-polarization field; Phonon relaxation time; Phonon mean free path
 
Summary, etc. In this paper, the built-in-polarization field effect on mean free path of acoustic phonons in bulk wurtzite binary nitrides (GaN, AlN) has been theoretically investigated. Due to the modification of elastic constant of the material by the effect of polarization field, there is a corresponding enhancement in group velocity and Debye frequency of phonons. The scattering rate of phonons also affected by this field, as it is a function of velocity or/and Debye frequency. The result shows that polarization field suppresses various scattering rates as well as combined scattering rate of phonons. This implies an increased combined relaxation time of phonons. Hence, the mean free path of phonons increases. Thus, phonons travel freely for a longer distance between two successive scatterings. It is found that, the mean free path of low frequency phonons is longer than that of the high frequency phonons. It indicates that, the low frequency phonons are significantly affected by the built-in-polarization field. This can enhance thermal transport properties of the material, when built-in-polarization field taken into account. It may be a method to control the thermal transport properties of such materials by the application of electric field in a desired way, which can be considered in addressing thermal management issues in nitride based optoelectronic devices to minimize self-heating effects.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2017-03-23 09:30:00
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/12372
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 55, ##issue.no## 3 (2017): Indian Journal of Pure & Applied Physics
 
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