<strong>Full analysis of a high-bandwidth microring-based PIN modulator</strong>
Online Publishing @ NISCAIR
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Authentication Code |
dc |
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Title Statement |
<strong>Full analysis of a high-bandwidth microring-based PIN modulator</strong> |
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Added Entry - Uncontrolled Name |
Nikoufard, Mahmoud ; University of Kashan Kazemi Alamouti, Masoud ; University of Kashan University of Kashan |
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Uncontrolled Index Term |
Integrated photonics. Microring-based modulator; Frequency response; Electro-optic modulation; Transient analysis; InP material. |
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Summary, etc. |
This study presents a new simulation strategy for a high-speed microring-based PIN modulator using the finite element method. It includes dc and transient simulations of the electro-optical behavior of the device. Variations in the effective refractive index and their effect on the optical output fields are determined by applying a reverse bias voltage pulse to the device. The frequency responses have been calculated for the microring modulator and 3 dB bandwidth. Calculations show a 3 dB bandwidth of over 115 GHz for a ring with a radius of 8 µm and a width of 0.5 µm at -7 V biasing voltage. |
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Publication, Distribution, Etc. |
Indian Journal of Pure & Applied Physics (IJPAP) 2017-03-23 09:30:00 |
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Electronic Location and Access |
application/pdf http://op.niscair.res.in/index.php/IJPAP/article/view/12219 |
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Data Source Entry |
Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 55, ##issue.no## 3 (2017): Indian Journal of Pure & Applied Physics |
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Language Note |
en |
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Terms Governing Use and Reproduction Note |
Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India © 2015. The Council of Scientific & Industrial Research, New Delhi. |
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