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<strong>Electrical and optical properties of n-type InSb thin films</strong>

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Title Statement <strong>Electrical and optical properties of n-type InSb thin films</strong>
 
Added Entry - Uncontrolled Name Vishwakarma, Shree Ram; Dr. R M L Avadh University, Faizabad-224001
UPCST, Lucknow
 
Uncontrolled Index Term Condensed Matter Physics; thin solid film
n-InSb thin films; Temperature; Resistivityl carrier concentration; Direct band gap
 
Summary, etc. The <em>n</em>-type indium antimonide thin films of the thickness 900 nm have been fabricated by electron beam evaporation technique on ultrasonically cleaned glass substrates at different temperatures (298 K–473 K) using optimized source material. The electrical and optical properties of these films have been studied and optimized the film deposition temperature. The electrical resistivity decreases (1.50-0.25)×10<sup>-3</sup> ohm.cm with increase of temperature up to 398 K. The Hall Effect measurement indicates that the films are <em>n</em>-type semiconductor having carrier concentration (0.100.040)×10<sup>18</sup> cm<sup>-3 </sup>and mobility (3.03-53.20)×10<sup>4 </sup>cm<sup>2</sup>/Vs. The type of semiconductivity has also been confirmed by TEP measurement. The direct band gap has been calculated by Fourier Transform Infrared (FTIR) transmission spectra recorded at room temperature. The direct band decreases from 0.195 to 0.180 eV with increase of substrate temperatures (298 K-473 K). The carrier concentration 0.040×10<sup>18 </sup>cm<sup>-3</sup><sub>,</sub> Hall mobility 53.20×10<sup>4 </sup>cm<sup>2</sup>/Vs, electrical resistivity 0.25 ×10<sup>-3</sup> ohm.cm and direct band gap 0.18 eV have been observed for <em>n</em>-InSb film of 900 nm thick deposited at 398 K.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2016-09-22 14:14:31
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/4007
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 54, ##issue.no## 9 (2016): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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