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<strong>Growth and characterization of TGS single crystal doped with NiSO4 grown by Sankaranarayanan-Ramasamy method</strong>

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Title Statement <strong>Growth and characterization of TGS single crystal doped with NiSO4 grown by Sankaranarayanan-Ramasamy method</strong>
 
Added Entry - Uncontrolled Name Zolfagharian, Nazanin ; Crystal Growth Lab., Faculty of Physics, Semnan University
Rezagholipour Dizaji, Hamid ; Crystal Growth Lab., Faculty of Physics, Semnan University
 
Uncontrolled Index Term Transmittance; Growth from solution; X-ray diffraction; NiSO4 dopant; TGS crystal
 
Summary, etc. <strong>Unidirectional &lt;001&gt; NiSO<sub>4 </sub>doped triglycine sulphate (TGS) single crystal of 15 mm in diameter and 150 mm in length was successfully grown in aqueous solution by Sankaranarayanan-Ramasamy (S-R) method. The characterization of the grown crystal was made by powder X-ray diffraction, UV-Vis. spectroscopy, Fourier transform infrared spectroscopy (FTIR), Vicker’s microhardness studies. The X-ray diffraction analysis revealed a monoclinic structure for the grown crystal. UV–Vis. analysis showed high transmittance for the doped TGS crystal in the entire visible region. FTIR spectrum verified the presence of various functional groups in the grown specimen. Vicker's microhardness studies of the doped TGS crystal showed that it is harder than pure TGS crystal. The density of the doped crystal was found to be higher than that of the undoped one.</strong>
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2015-05-01 11:23:24
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/4911
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 53, ##issue.no## 4 (2015): Indian Journal of Pure & Applied Physics
 
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