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<strong>Low voltage high bandwidth self-biased high swing cascode current mirror</strong>

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Title Statement <strong>Low voltage high bandwidth self-biased high swing cascode current mirror</strong>
 
Added Entry - Uncontrolled Name Raj, Nikhil ; Department of Computer and Communication Engineering, Manipal University, Jaipur, India
Singh, Ashutosh Kumar; Department of Computer Application, NIT Kurukshetra, Haryana 136119, India
Gupta, Anil Kumar; Department of Electronics and Communication Engineering, NIT Kurukshetra, Haryana 136119, India
 
Uncontrolled Index Term Bulk-driven MOS; Quasi-floating-gate MOS; Low-voltage; Current Mirror; Bandwidth
 
Summary, etc. A low voltage self-biased high swing cascode current mirror (SHCCM) with improved bandwidth has been proposed. The recently reported SHCCM architecture use the bulk-driven quasi-floating gate (BDQFG) MOS transistors to enhance the effective transconductance which improves the current mirror input resistance and bandwidth range over the same architecture realized using bulk-driven MOS transistors. To further improve the bandwidth the proposed BDQFG based SHCCM uses two resistances which makes the current mirror frequency response free from input capacitors and also reduces the parasitic capacitance effect which results in increased bandwidth with an advantage of having no degradation in other performance parameters of current mirror. The proposed current mirror operates well for input current range from 0 to 200 μA with good linearity and shows the bandwidth of 298 MHz (i.e., 1.6 times over prior reported BDQFG based SHCCM). The observed input and output resistance is 306 Ω and 165 kΩ, respectively. Further, the THD analysis is carried to prove the robustness of proposed current mirror. The complete analysis is performed on UMC 0.18 μm technology using HSpice.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2017-04-19 10:17:38
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/13025
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 55, ##issue.no## 4 (2017): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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