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<strong>Theoretical investigation of the effect of Ga content on the power conversion efficiency in ZnO/CdS/Cu(In,Ga)Se2 cells</strong>

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Title Statement <strong>Theoretical investigation of the effect of Ga content on the power conversion efficiency in ZnO/CdS/Cu(In,Ga)Se2 cells</strong>
 
Added Entry - Uncontrolled Name Kassis, A. ; Atomic Energy Commission of Syria
 
Uncontrolled Index Term Cu(In,Ga)Se2 solar cells; Ga content; Photovoltaic parameters; Interface recombination
 
Summary, etc. <strong><span lang="&quot;EN-US&quot;">Power conversion efficiency of solar cells is theoretically expected to have its maximum at an absorber energy band gap of <em>E</em><sub>g</sub> <img src="http://nopr.niscair.res.in/image/spc_char/wave.gif" border="0" alt="" /> 1.4 eV, but experimentally it is found at <em>E</em><sub>g</sub> = 1.18 eV for<span lang="&quot;EN-US&quot;"> <span lang="&quot;EN-US&quot;">ZnO/CdS/Cu(In,Ga)Se<sub>2</sub><span lang="&quot;EN-US&quot;"> cells. In the present work, the explanation of this shift is sought in terms of optical losses through the window layer and interface recombination. The calculated results are compared with theoretical and experimental findings as reported in the literature.</span></span></span></span></strong>
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2015-05-01 11:23:24
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/3660
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 53, ##issue.no## 4 (2015): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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