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<strong>Electronic structure and cohesive properties of GaN</strong>

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Title Statement <strong>Electronic structure and cohesive properties of GaN</strong>
 
Added Entry - Uncontrolled Name Arora, G ; Geetanjali Institute of Technical Studies, Udaipur-313001, Rajasthan, India
Mund, H.S ; ML Sukhadia University Udaipur-313001, Rajasthan India
Sharma, V. ; ML Sukhadia University Udaipur-313001, Rajasthan India
Heda, N. L. ; Department of Pure and Applied Physics, University of Kota, Kota-324005, Rajasthan, India.
Ahuja, B. L. ; ML Sukhadia University Udaipur-313001, Rajasthan India
 
Uncontrolled Index Term Nitride semiconductors; Electronic band structure; X-ray; Gamma-ray spectroscopies
 
Summary, etc. <strong>The first-ever Compton profile of GaN employing high energy (662 keV) γ-radiations from a <sup>137</sup>Cs source has been reported. To compare our experimental momentum densities, the Compton profiles and electronic properties using density functional theory within linear combination of atomic orbitals have also been computed. The nature of bonding in GaN is compared with its isoelectronic InN using equal-valence-electron-density profiles and Mulliken’s population. To establish applicability of Compton scattering in computation of cohesive energy, the cohesive energy using the experimental and theoretical momentum densities has also been studied. The energy bands and density of states computed using DFT calculations are compared with the existing data.</strong>
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2015-05-11 13:07:43
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/1639
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 53, ##issue.no## 5 (2015): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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