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<strong>Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes</strong>

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Title Statement <strong>Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes</strong>
 
Added Entry - Uncontrolled Name KAYA, Ahmet
 
Uncontrolled Index Term Au/n-4H-SiC diodes; Temperature dependent BH and ideality factor; Barrier inhomogeneities; Gaussien distrubition
 
Summary, etc. <strong>Au/n-4H-SiC Schottky barrier diodes (SBDs) were fabricated and their temperature and voltage dependence of saturation current (<em>I<sub>o</sub></em>), ideality factor (<em>n</em>), barrier height (Φ<em><sub>bo</sub></em>), series and shunt resistances (<em>R<sub>s</sub></em>, <em>R<sub>sh</sub></em>) values were obtained by using current-voltage (<em>I-V</em>) measurements in the temperature range 110-400 K. The values of <em>I<sub>o</sub></em>, <em>n</em> and Φ<em><sub>bo</sub></em> were found as 3.00 10<sup>-14</sup>A, 3.41 and 0.39 eV at 110 K and 7.7510<sup>-7</sup>A, 1.64 and 0.90 eV at 400 K, respectively. The Φ<em><sub>bo</sub></em>-<em>q</em>/2<em>kT</em> plot was drawn to obtain an evidence of a Gaussian distribution (GD) of the barrier heights (BHs). The mean BH (Φ<em><sub>bo</sub></em>) and standard deviation (σ<sub>o</sub>) values have been extracted from the intercept and slope of this plot is as 1.089 eV and 0.127 V, respectively. The Φ<em><sub>bo</sub></em> and Richardson constant (<em>A</em><sup>*</sup>) values were obtained from the modified Ln(<em>I</em><sub>o</sub>/<em>T</em><sup>2</sup>)-(<em>q</em><sup>2</sup>σ<sub>s</sub><sup>2</sup>/2<em>k</em><sup>2</sup><em>T</em><sup>2</sup>) versus <em>q</em>/<em>kT</em> plot as 1.093 eV and 160.6 A.cm<sup>-2</sup>K<sup>-2</sup> which can be considered as close to the theoretical value 146 A.cm<sup>-2</sup>K<sup>-2</sup>, respectively. Voltage dependent activation energy (<em>E<sub>a</sub></em>) value was also obtained from the In(<em>I<sub>o</sub></em>/<em>T</em><sup>2</sup>)-<em>q</em>/<em>kT</em> and In(<em>I<sub>o</sub></em>/<em>T</em><sup>2</sup>)-<em>q</em>/<em>nkT </em>plots in the voltage range 0.05-0.50 V with 0.05 V steps and it is found that it decreases with increasing voltage. The temperature dependence of <em>I-V</em> characteristics in Au/n-4H-SiC diodes can be successfully explained on the basis of a TE mechanism with GD of the BHs.</strong>
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2015-04-27 15:04:26
 
Electronic Location and Access http://op.niscair.res.in/index.php/IJPAP/article/view/5810
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 53, ##issue.no## 1 (2015): Indian Journal of Pure & Applied Physics
 
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