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<strong>Performance of silicon micro ring modulator with an interleaved <em>p-n</em> junction for optical interconnects</strong>

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Title Statement <strong>Performance of silicon micro ring modulator with an interleaved <em>p-n</em> junction for optical interconnects</strong>
 
Added Entry - Uncontrolled Name Goyal, Priyanka ; Gautam Buddha university
Kaur, Gurjit ; Gautam Buddha university
 
Uncontrolled Index Term Silicon Photonics; Modulators; Interleaved Junction; Mach-Zehnder modulators
 
Summary, etc. Silicon micro ring modulators are critical components in optical on-chip communications. The performance of an interleaved <em>p-n</em> junction micro ring modulator using FDTD solutions has been characterized. In this paper, the model and simulation of a modulator utilizing an interleaved junction with a SiO<sub>2</sub> layer with a thickness of 10 µm have been presented. It is demonstrated that a loss of 34.7 dB/cm occurs during transmission. The modulator operates at 1.55 µm wavelength with a <em>V</em>π<em>L</em> of 0.78 V-cm at a voltage of 1 V, which gives figure of merit.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2017-06-01 10:24:58
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/15389
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 55, ##issue.no## 5 (2017): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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