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<strong>Analysis of density and time constant of interface states of MIS device by conductance method</strong>

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Title Statement <strong>Analysis of density and time constant of interface states of MIS device by conductance method</strong>
 
Added Entry - Uncontrolled Name Tataroglu, Adem
 
Uncontrolled Index Term MIS device; Conductance method; Interface states; Interface state time constant
 
Summary, etc. The density and time constant of interface states of Au/Si<sub>3</sub>N<sub>4</sub>/n-Si (MIS) device have been analyzed by conductance method. The capacitance and conductance measurements of the device have been performed at various frequencies in the range of 1 kHz-1 MHz. Experimental results show that <em>G<sub>p</sub></em>/ω-log(<em>f</em>) plots for each voltage value give a peak because of the presence of interface states. The density (<em>N<sub>ss</sub></em>) and time constant () of interface states have been calculated from maximum value of the peak. The values of <em>N<sub>ss</sub></em><sub> </sub>and range from 2.49×10<sup>13 </sup>eV<sup>-1</sup>cm<sup>-2</sup> to 7.57×10<sup>12 </sup>eV<sup>-1</sup>cm<sup>-2</sup> and from 2.67×10<sup>-5</sup>s to 1.67×10<sup>-5</sup>s, respectively.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2016-06-22 09:57:45
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/12349
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 54, ##issue.no## 6 (2016): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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