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<strong>Hydrogen gas sensing properties of Pd/ZnO thin films grown on n-Si&lt;100&gt; substrates at room-temperature by thermal evaporation and sol-gel techniques: A comparative study</strong>

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Title Statement <strong>Hydrogen gas sensing properties of Pd/ZnO thin films grown on n-Si&lt;100&gt; substrates at room-temperature by thermal evaporation and sol-gel techniques: A comparative study</strong>
 
Added Entry - Uncontrolled Name Jit, Satyabrata ; Indian Institute of Technology (BHU)
Yadav, Aniruddh Bahadur; Indian Institute of Technology (BHU)
Periasamy, C
 
Uncontrolled Index Term interdisciplinary physics; Nanoscience and Nanotechnology; ZnO Thin Film Technology; Hydrogen Gas Sensing;
Nanocrystalline ZnO thin films, Palladium catalyst, H2 gas sensor, Schottky contacts, thermal evaporation, Sol-gel
 
Summary, etc. The present paper compares the room temperature hydrogen (H<sub>2</sub>) gas sensing properties of two Pd/nanocrystalline-ZnO thin film based Schottky contacts grown on <em>n</em>-type silicon (100) substrates by thermal evaporation and sol-gel techniques. The structural, surface and optical properties of the ZnO thin films under consideration are also presented. The Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS) measurements have been carried out to study the surface morphologies and elementary compositions of the ZnO films,respectively. The X-ray diffraction (XRD) analysis shows that the ZnO thin films grown by both the methods are polycrystalline in nature with a hexagonal wurtzite structure. The optical band gaps of the films are estimated from the photoluminescence (PL) spectroscopy as 3.26 eV and 3.28 eV for thermal evaporation and sol-gel techniques, respectively. The current–voltage (<em>I-V</em>) measurements have been carried out to study the electrical and hydrogen (H<sub>2</sub>) sensing characteristics of Pd/ZnO Schottky contacts fabricated on the ZnO thin films grown by the two methods under consideration. Both the Pd/ZnO contacts under consideration are observed to have a good Schottky behaviour under dark condition and a high response to H<sub>2</sub> gas with relatively short response and recovery times. Device fabricated by thermal evaporation shows better performance.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2016-06-10 13:22:16
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/1625
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 51, ##issue.no## 11 (2013): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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