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Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives

Electronic Theses of Indian Institute of Science

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Title Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives
 
Creator Chandrasekar, Hareesh
 
Subject Group III-A Nitrides
High Electron Mobility Transistor
Nitride Semiconductors
Aluminium Nitride-Silicon Interface
Gallium Nitride Films
Aluminium Nitride Thin Films
Nitride Films
Nitride Epitaxy
Nitride Hetero-Interfaces
Aluminium Nitride (AlN) Epitaxial Layers
GaN Films
AlN/Si Hetero-interface
AlN-Si Interface
Materials Science
 
Description Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these applications utilize device structures that employ a single or multiple hetero-junctions, with material compositions varying across the interface. For example, the workhorse of GaN based electronic devices is the high electron mobility transistor (HEMT) which is usually composed of an AlGaN/GaN hetero-junction, where a two-dimensional electron gas (2DEG) is formed due to differences in polarization between the two layers. In addition to such hetero-junctions in the same material family, formation of hetero-interfaces in nitrides begins right from the epitaxy of the very first layer due to the lack of native substrates for their growth. The consequences of such "dissimilar" hetero-junctions typically manifest as large defect densities at this interface which in turn gives rise to defective films. Additionally, if the substrate is also a semiconductor, the electrical properties at such dissimilar semiconductor-nitride hetero-junctions are particularly important in terms of their influence on the performance of nitride devices. Nevertheless, the large defect densities at such dissimilar 3D-3D semiconductor interfaces, which translate into more trap states, also prevents them from being used as active device layers to say nothing of reliability considerations arising because of these defects. Recently, the advent of 2D materials such as graphene and MoS2 has opened up avenues for Van der Waal’s epitaxy of these layered films with practically any other material. Such defect-free integration enables dissimilar semiconductor hetero-junctions to be used as active device layers with carrier transport across the 2D-3D hetero-interface. This thesis deals with hetero-epitaxial growth platforms for reducing defect densities, and the material and electrical properties of dissimilar hetero-junctions with the group III-A nitride material system.
 
Contributor Raghavan, Srinivasan
 
Date 2017-10-31T07:13:50Z
2017-10-31T07:13:50Z
2017-10-31
2016
 
Type Thesis
 
Identifier http://hdl.handle.net/2005/2740
http://etd.ncsi.iisc.ernet.in/abstracts/3567/G27837-Abs.pdf
 
Language en_US
 
Relation G27837