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Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si

Electronic Theses of Indian Institute of Science

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Field Value
 
Title Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si
 
Creator Mohan, Nagaboopathy
 
Subject Gallium Nitrides
Gallium Nitride Alloys
Gallium Nitride
Dislocation Reduction
Gallium Nitride on Silicon
High Electron Mobility Transistors
Si Doping
GaN
Materials Science
 
Description Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that have been developed on native substrates, III-nitride devices have been developed on non-native substrates such as Si, sapphire and SiC. This is because bulk cheap native III-nitride substrates are unavailable. Among the known substrates, III-nitride technology development on Si is desirable because of its large substrate size and low cost. However, the large lattice and thermal expansion mismatch between the III-nitrides films and Si substrate leads to a high level of dislocations, 1010 cm-2, and tensile stress which results in cracking. For successful integration of crack free and low dislocation density GaN on Si various kinds of transition layer schemes are used that help to incorporate a compressive growth stress to neutralize the tensile thermal mismatch stresses and also to reduce dislocation densities to levels required by devices. These transition schemes, ranging from 400 nm to 7 m, involve the use of graded AlGaN layers, high/low temperature interlayers and superlattices.
The aim of the research described in this thesis was a systematic comparison of the different transition layer schemes currently used with the objective of increasing the efficiency of integrating device quality, crack free, low dislocation density,
 
Contributor Raghavan, Srinivasan
 
Date 2017-11-23T07:53:36Z
2017-11-23T07:53:36Z
2017-11-23
2014
 
Type Thesis
 
Identifier http://hdl.handle.net/2005/2789
http://etd.ncsi.iisc.ernet.in/abstracts/3656/G26626-Abs.pdf
 
Language en_US
 
Relation G26626