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A Study of Electrical Transport and 1 / f Noise in Topological Insulators

Electronic Theses of Indian Institute of Science

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Field Value
 
Title A Study of Electrical Transport and 1 / f Noise in Topological Insulators
 
Creator Bhattacharyya, Semonti
 
Subject Electrical Transport
Topological Insulators
Quantum Spin Hall Effect
Topological Insulator Materials
Epitaxial Thin Films
TI Films
Topological Insulator Films
Physics
 
Description The recent discoveries of topological insulators (TI) has opened a new realm for study¬ing topological systems and exploring the exotic properties they offer. The in-built topological protection against direct backscattering and absence of localization makes two-dimensional (2D) surface states of bismuth chalcogenide-based strong TI a promising platform for studying interesting phenomena in condensed matter physics like dissipation-less transport, quantum anomalous hall effect, topological magnetoelectric effect, majo¬rana fermions etc. and also makes this system very suitable for applications in the fields of electronics and spintronics. However, realization of these novel states can be difficult because of scattering of surface states from different types of disorders (intrinsic or ex¬trinsic) or the presence of parallel channels in the bulk of the sample which can dominate over surface transport. The main goal of this thesis is to evaluate the performance of TI as an electronic element and look into elastic and inelastic scattering processes and kinetics of these scatterers. In most part of this work we concentrate on the magnitude and origin of low-frequency flicker noise or the 1/f-noise, a key performance marker in electronics, to characterize the electrical transport in TI.
In this work we have studied 1/f-noise in both mechanically exfoliated TI-flakes and epitaxially grown TI films by varying chemical potential and temperature. Our study of exfoliated TI-flakes with a wide range of thickness (10 nm to 80 μm) suggests that whereas at thinner (
 
Contributor Ghosh, Arindam
 
Date 2017-12-10T07:29:22Z
2017-12-10T07:29:22Z
2017-12-10
2016
 
Type Thesis
 
Identifier http://hdl.handle.net/2005/2887
http://etd.ncsi.iisc.ernet.in/abstracts/3749/G27753-Abs.pdf
 
Language en_US
 
Relation G27753