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<strong>Material properties analysis of graphene base transistor (GBT) for VLSI analog circuits design</strong>

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Authentication Code dc
 
Title Statement <strong>Material properties analysis of graphene base transistor (GBT) for VLSI analog circuits design</strong>
 
Added Entry - Uncontrolled Name Singh, Gurinder pal ; Chandigarh university
Raj, Balwinder ; Assistant Professor, NIT Jalandhar, Punajb
Raj, Balwinder ; National Institute of Technology, Jalandhar 144 011, India
 
Uncontrolled Index Term GBT; BCI; EBI; Work function; Permittivity; Electron affinity
 
Summary, etc. Graphene base transistor’s (GBT) analysis has been reviewed in this paper. This study has been focused on work carried out by other authors for GBT physics. Here prominence has been given to material properties and their effects on GBT for VLSI analog circuit design to operate in high frequency range of THz. Various papers in literature have been reported for the implementation of designs with different emitter and collector materials. Materials properties are the controlling parameters to decide cut-off frequency (<em>f­</em><sub>T</sub>), trans-conductance, gain and off current (<em>I</em><sub>off</sub>) in GBT. The implemented results of literatures signify that the electron affinity and work function of emitter and collector are the dominant factors for flow of charges from emitter to collector. Dependency of these two parameters on dielectric constant and thickness of emitter-base insulator (EBI) and base collector insulator (BCI) that are tantalum pentoxide (Ta<sub>2</sub>O<sub>5</sub>), carbon-doped silicon oxide (SiCOH) and SiO<sub>2</sub> has been studied. Effects of collector and BCI thickness have been investigated in detail to scrutinize base leakage current by the virtue of back scattering in collector-BCI interface. Small signal equivalent circuit model for GBT have also been studied by including parasitic capacitance behaviour between graphene Dirac-point potential with respect to graphene fermi level, emitter, EBI, BCI and collector fermi level potential.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2017-12-28 12:42:30
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/15682
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 55, ##issue.no## 12 (2017): Indian Journal of Pure & Applied Physics
 
Language Note en
 
Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/15682/53125
http://op.niscair.res.in/index.php/IJPAP/article/download/15682/53126
 
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