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Field | Value |
Title | Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions |
Names |
UPADHYAY, S
MANDAL, A AGARWAL, A GHADI, H KUMARI, KCG BASU, A SUBRAHMANYAM, NBV SINGH, P CHAKRABARTI, S |
Date Issued | 2016 (iso8601) |
Abstract | In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) are among the most efficient devices in the mid-wavelength infrared and long-wavelength infrared regions for various defense and space application purposes. Considering the importance of the results reported so far on In(Ga)As/GaAs QDIPs, here we had tried to develop a post-growth method for enhancing QDIP characteristics using both low energy and high energy light ion (hydrogen) implantations. The field-assisted tunneling process of dark current generation was suppressed due to the hydrogen ion implantation, even at a very high operational bias. A stronger multicolor photo-response was obtained for devices implanted with low energy hydrogen ions. From experimental results, we proposed a device model which explains the improved QDIPs performance caused by hydrogen ion implantation. (C) 2016 Elsevier Ltd. All rights reserved. |
Genre | Article |
Topic | OPTOELECTRONIC DEVICES |
Identifier | MATERIALS RESEARCH BULLETIN,84,79-84 |