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<strong>Electrical characterization of MIS diode prepared by magnetron sputtering</strong>

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Title Statement <strong>Electrical characterization of MIS diode prepared by magnetron sputtering</strong>
 
Added Entry - Uncontrolled Name Tataroglu, Adem ; Gazi University
Tanrıkulu, H ; Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey
Tanrıkulu, E E ; Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey
Uluşan, A Büyükbaş ; Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey
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Uncontrolled Index Term condensed matter physics
MIS diode; TiO2 thin film; Ideality factor; Barrier height; Interface states; Series resistance
 
Summary, etc. TiO<sub>2 </sub> thin film has been prepared on <em>n</em>-type Si wafer to fabricate an Au/TiO<sub>2</sub>/n-Si (MIS) diode by RF magnetron sputtering technique. The current-voltage (<em>I</em>-<em>V</em>) and capacitance-voltage (<em>C</em>-<em>V</em>) measurements of the diode have been performed over a wide range of temperatures (240-400 K) and frequencies (10 kHz-1 MHz), respectively. From <em>I</em>-<em>V</em> measurements, an abnormal increase in the barrier height (Φ<sub>b</sub>) and a decrease in the ideality factor (<em>n</em>) with increasing temperature have been observed. This temperature dependence has been attributed to the barrier in homogeneities by assuming a Gaussian distribution (GD) of barrier heights at metal/semiconductor (<em>M</em>/<em>S</em>) <em>interface</em>. Both the conventional and modified Richardson plot show linearity. The activation energy (<em>E</em><sub>a</sub>), Richardson constant (<em>A</em><sup>*</sup>) and Φ<sub>b </sub> value have been calculated from the slope and intercept of the linear region. The obtained Richardson constant value of 113.82 A. cm<sup>-2</sup>. K<sup>-2</sup> is in close agreement with the known value of 112 A.cm<sup>-2</sup>. K<sup>-2 </sup> for <em>n</em>-Si. The interface state density (<em>N</em><sub>ss</sub>) and series resistance (<em>R</em><sub>s</sub>) of the diode has been obtained from the <em>I</em>-<em>V</em> measurements. In addition, the Φ<sub>b</sub> value was determined from <em>C</em><sup>-2</sup>-<em>V</em> characteristics. The obtained results indicate that the MIS diode with TiO<sub>2</sub> interfacial insulator layer can be used in many device applications.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2018-02-15 09:42:27
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/17980
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 56, ##issue.no## 2 (2018): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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