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Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry

Electronic Theses of Indian Institute of Science

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Title Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry
 
Creator Sharan, Neha
 
Subject Metal Semiconductor Field Effect Transistors (MOSFET)
Common Double Gate (CDG) MOSFETs-Compact Modeling
Electronic Circuits-Design
Transistor Circuits
MOSFETs-Core Model
Double Gate MOSFETs
Asymmetric CDG MOSFETs
Semiconductor Device Modeling
Gate Oxide Thickness Asymmetry
Gate Oxide Asymmetry
Electronic Systems Engineering
 
Description Compact Models are the physically based accurate mathematical description of the cir-cuit elements, which are computationally efficient enough to be incorporated in circuit simulators so that the outcome becomes useful for the circuit designers. As the multi-gate MOSFETs have appeared as replacements for bulk-MOSFETs in sub-32nm technology nodes, efficient compact models for these new transistors are required for their successful utilization in integrated circuits.
Existing compact models for common double-gate (CDG) MOSFETs are based on the fundamental assumption of having symmetric gate oxide thickness. In this work we explore the possibility of developing models without this approximation, while preserving the computational efficiency at the same level. Such effort aims to generalize the compact model and also to capture the oxide thickness asymmetry effect, which might prevail in practical devices due to process uncertainties and thus affects the device performance significantly.
However solution to this modeling problem is nontrivial due to the bias-dependent asym-metric nature of the electrostatic. Using the single implicit equation based Poisson so-lution and the unique quasi-linear relationship between the surface potentials, previous researchers of our laboratory have reported the core model for such asymmetric CDG MOSFET. In this work effort has been put to include Non-Quasistatic (NQS) effects, different small-geometry effects, and noise model to this core, so that the model becomes suitable for practical applications. It is demonstrated that the quasi-linear relationship between the surface potentials remains preserved under NQS condition, in the presence of all small geometry effects. This property of the device along with some other new techniques are used to develop the model while keeping the mathematical complexity at the same level of the models reported for the symmetric devices. Proposed model is verified against TCAD simulation for various device geometries and successfully imple-mented in professional circuit simulator. The model passes the source/drain symmetry test and good convergence is observed during standard circuit simulations.
 
Contributor Mahapatra, Santanu
 
Date 2018-05-08T06:55:35Z
2018-05-08T06:55:35Z
2018-05-08
2014
 
Type Thesis
 
Identifier http://etd.iisc.ernet.in/2005/3489
http://etd.iisc.ernet.in/abstracts/4356/G26589-Abs.pdf
 
Language en_US
 
Relation G26589