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<strong>Physical investigation of copper thin film prepared by sputtering</strong>

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Authentication Code dc
 
Title Statement <strong>Physical investigation of copper thin film prepared by sputtering</strong>
 
Added Entry - Uncontrolled Name Drize, Abbas ; University of Sciences and Technology,
Settaouti, Abderrahmane
 
Uncontrolled Index Term Monte Carlo simulation; Growth; Sputtered atom; Thin film
 
Summary, etc. Copper thin films have been deposited by sputtering. The simulation results show that most of deposited atoms on the substrate have kinetic energy ranging between 1 and 1.5 eV which leads to the deterioration of the crystalline quality, the impact angle between 10°- 70° and 100°-160°, with a peak at 40° and 150°, the oblique incidences of sputtered atoms on the substrate give films with porous and columnar microstructures. For higher pressure theses distributions are more uniforms leading to the uniformity of the obtained thin film which paid a great attention in the industry. These results are in accordance with numerical and experimental ones obtained in others works.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2018-06-22 10:18:16
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/12181
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 56, ##issue.no## 6 (2018): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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