Synthesis, Optical And Photoelectrical Investigations On PbS nano-,micro-structures
Electronic Theses of Indian Institute of Science
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Title |
Synthesis, Optical And Photoelectrical Investigations On PbS nano-,micro-structures
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Creator |
Pendyala, Naresh Babu
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Subject |
Lead Sulfide - Nano technology
Lead Sulfide - Synthesis Lead Sulfide Nanostructures Lead Sulfide Quantum Dots - Synthesis Lead Sulfide Quantum Dots - Photoluminescence Lead Sulfide Nano Micro-crystallites - Photoluminescence Lead Sulfide Quantum Dots - Ion Sensing PbS Nanoparticles PbS Quantum Dots Poly Vinyl Alcohol PbS Nanostructures PbS Nano-, Micro-structures PbS Dendrite Structures Nanotechnology |
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Description |
The thesis describes the synthesis of PbS nano-, micro-structures by colloidal and hydrothermal techniques. Size and morphology dependent luminescence studies were carried out in detail. Application oriented studies like ion sensing and modulation of luminescence are carried out on colloidal PbS QDs. Photoelectrical studies are carried out on various morphologies of PbS microstructures. We observe the persistent photoconductivity, growth and quenching of photocurrent, and a few novel phenomena in flower shaped PbS microstructures. This work is presented in eight chapters inclusive of summary and directions for future work. CHAPTER 1 provides a brief introduction to optical and photoelectrical properties of semiconductor quantum dots and hydrothermal technique in preparation of quantum structures. A review of PbS nanostructures and its technological applications are discussed. CHAPTER 2 provides the experimental techniques used in this work. First, the synthesis of PbS nano-, micro-structures by various methods, and characterization tools used in this work are briefly presented. CHAPTER 3 deals with the synthesis of PbS quantum dots in poly vinyl alcohol with various precursor concentrations to identify the surface states by temperature dependent photoluminescence (PL) measurements. Average bandgap value calculated from absorption measurements was 2.1 eV. We have observed that high-energy PL bands (>1.3 eV) are due to electron traps (Pb dangling bonds) and low-energy bands ( |
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Contributor |
Koteswara Rao, K S R
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Date |
2010-10-21T05:53:48Z
2010-10-21T05:53:48Z 2010-10-21 2009-04 |
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Type |
Thesis
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Identifier |
http://etd.iisc.ernet.in/handle/2005/921
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Language |
en_US
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Relation |
G23059
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