Record Details

Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics

Electronic Theses of Indian Institute of Science

View Archive Info
 
 
Field Value
 
Title Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics
 
Creator Gairola, Anshita
 
Subject Chemical Vapor Deposition (CVD)
Dielectrics
Thin Films
Atomic Layer Deposition (ALD)
Titanium Oxide Thin Films
Metalorganic Chemical Vapor Deposition
Metaloxide Thin Films
Thin Film Deposition
Physical Vapor Deposition (PVD)
Titanium Oxide
Titanium Dioxide Film
MOCVD
Materials Science
 
Description The work carried out as a part of this thesis has been focussed on understanding different aspects of the chemical vapor deposition process namely, ALD / MOCVD. A large part of the thesis is aimed at solving the problem of a single-source precursor for the MOCVD process to obtain substituted metal oxide thin films. For a chemical vapor deposition technique, it is important to understand the requisite salient features of precursor for deposition of thin films. For this purpose, not only is the structural characterization of the chemical precursor is required but also an in-depth thermal analysis of the precursor to know its vapor pressure. Vapor pressure of a metalorganic complex is one of the important properties to evaluate the applicability of a metalorganic complex as a MOCV/ALD precursor. The thesis discusses a novel approach to use thermal analysis as a tool to gauge the viability of substituted metal “single source” precursor for MOCVD/ALD. The other half deals with material characterization of thin films grown by an ALD process using hydrogen and Ti(OiPr)2(tbob)2 as precursors. The films were further studied for their potential application as high-k dielectric in DRAM applications.
The first chapter is an overview of topics that are relevant to the work carried out in this thesis. The chapter focuses on the description of techniques used for thin film deposition. A detailed review of CVD-type techniques (ALD/ MOCVD) is then given. Chapter1 reviews the various process parameters involved in ALD,i.e. film growth(specifically as a function of the reactant pulse length, the nature of the chemical reactant/precursor and that of the metal precursor, and purge length) and growth temperature. Following the discussion of ALD, CVD and its growth kinetics are also discussed. Chapter 1 then outlines a holistic understanding of precursors, followed the differences in requirement for using them in ALD and MOCVD. Further, an introduction to the titanium oxide (Stoichiometric titanium dioxide and various Magneli phases) system, its phase diagram, oxide properties and their applications is given. Chapter 1 concludes by delineating the scope of the work carried out which is presented in the thesis.
The second chapter deals with the synthesis of a series of substituted metal “single source” precursors to be used for MOCVD of substituted metal oxides thin films. The precursor complexes were of the type AlxCr1-x (acac)3 where 0
 
Contributor Umarji, A M
Shivashankar, S A
 
Date 2013-07-10T05:47:22Z
2013-07-10T05:47:22Z
2013-07-10
2011-09
 
Type Thesis
 
Identifier http://etd.iisc.ernet.in/handle/2005/2104
http://etd.ncsi.iisc.ernet.in/abstracts/2707/G25128-Abs.pdf
 
Language en_US
 
Relation G25128