ICAR Research Data Repository for Knowledge Management
Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization
Electronic Theses of Indian Institute of Science
View Archive Info| Field | Value | |
| Title |
Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization
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| Creator |
Paul, Shashi
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| Subject |
Aluminium-Gallium Arsenide
Semiconductors Optoelectronics Gallium Arsenide Semiconductors Metalorganic Vapor Phase Epitaxy (MOVPE) AlGaAs GaAs Electronic Engineering |
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| Contributor |
Shivashankar, S A
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| Date |
2013-09-05T09:22:14Z
2013-09-05T09:22:14Z 2013-09-05 1995-01 |
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| Type |
Thesis
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| Identifier |
http://etd.iisc.ernet.in/handle/2005/2233
http://etd.ncsi.iisc.ernet.in/abstracts/2846/G14056-Abs.pdf |
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| Language |
en_US
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| Relation |
G14056
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