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THEORETICAL CHARACTERIZATION OF NOVEL HIGH ELECTRON MOBILITY TRANSISTOR AND FinFET

KrishiKosh

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Title THEORETICAL CHARACTERIZATION OF NOVEL HIGH ELECTRON MOBILITY TRANSISTOR AND FinFET
 
Creator PANDEY, KAMAL PRAKASH
 
Contributor Kumar, Dr. Anil
 
Subject null
 
Description A GaN High electron mobility transistors (HEMTs) have been designed and simulated for high
voltage and high speed applications. Simple AlGaN/GaN on sapphire substrates HEMT and
HEMT with oxide layer have been proposed for achieving high current carrying capability as
well as high speed switching capability and analyzed using ATLAS (Silvaco) simulator. The
device characteristics suggest that the MOS-HEMT has better performance compared to the
conventional HEMT. Advantages of HEMT on the basis of band gap, electron mobility,
saturation drift velocity and power handling capacity has also been discussed. Simulation result
shows the effect of temperature on the cut off frequency, for temperature 248 K the technology
90 nm has the cut off frequency of 24.1 GHz while for the same technology at higher
temperature of 373 K the cut off frequency decrease to 9 GHz. It is designed and simulated of a
single gate FinFET structure on the SOI substrate using Silvaco TCAD. A 45 nm channel length
FinFET structure is compared with conventional MOSFET structure having same channel length.
Different structural and process parameters such as length, width, height, dielectric thickness,
doping etc has been optimized for designing the FinFET. The simulated structure shows the
threshold voltage of 0.37643; lower DIBL, higher drain saturation current and improved
parameters as compared to the conventional MOSFET structure.
 
Date 2018-04-19T11:09:27Z
2018-04-19T11:09:27Z
2018
 
Type Thesis
 
Identifier http://krishikosh.egranth.ac.in/handle/1/5810044180
 
Language en
 
Format application/pdf
 
Publisher Department of Electronics and Communication Engineering Shepherd Institute of Engineering and Technology (SHUATS) Allahabad, U.P.