THEORETICAL CHARACTERIZATION OF NOVEL HIGH ELECTRON MOBILITY TRANSISTOR AND FinFET
KrishiKosh
View Archive InfoField | Value | |
Title |
THEORETICAL CHARACTERIZATION OF NOVEL HIGH ELECTRON MOBILITY TRANSISTOR AND FinFET
|
|
Creator |
PANDEY, KAMAL PRAKASH
|
|
Contributor |
Kumar, Dr. Anil
|
|
Subject |
null
|
|
Description |
A GaN High electron mobility transistors (HEMTs) have been designed and simulated for high voltage and high speed applications. Simple AlGaN/GaN on sapphire substrates HEMT and HEMT with oxide layer have been proposed for achieving high current carrying capability as well as high speed switching capability and analyzed using ATLAS (Silvaco) simulator. The device characteristics suggest that the MOS-HEMT has better performance compared to the conventional HEMT. Advantages of HEMT on the basis of band gap, electron mobility, saturation drift velocity and power handling capacity has also been discussed. Simulation result shows the effect of temperature on the cut off frequency, for temperature 248 K the technology 90 nm has the cut off frequency of 24.1 GHz while for the same technology at higher temperature of 373 K the cut off frequency decrease to 9 GHz. It is designed and simulated of a single gate FinFET structure on the SOI substrate using Silvaco TCAD. A 45 nm channel length FinFET structure is compared with conventional MOSFET structure having same channel length. Different structural and process parameters such as length, width, height, dielectric thickness, doping etc has been optimized for designing the FinFET. The simulated structure shows the threshold voltage of 0.37643; lower DIBL, higher drain saturation current and improved parameters as compared to the conventional MOSFET structure. |
|
Date |
2018-04-19T11:09:27Z
2018-04-19T11:09:27Z 2018 |
|
Type |
Thesis
|
|
Identifier |
http://krishikosh.egranth.ac.in/handle/1/5810044180
|
|
Language |
en
|
|
Format |
application/pdf
|
|
Publisher |
Department of Electronics and Communication Engineering Shepherd Institute of Engineering and Technology (SHUATS) Allahabad, U.P.
|
|