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<strong>Optical and electrical properties of F doped SnO2 thin films</strong>

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Title Statement <strong>Optical and electrical properties of F doped SnO2 thin films</strong>
 
Added Entry - Uncontrolled Name Bogle, Kashinath Arjun; School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded-431606
More, Kiran D; Yeshwant Junior College, Umri, Dist. Nanded-431807 INDIA
Begum, Sumayya ; School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded-431606
Dadge, Jagdish W; Department of Physics, College of Engineering, Pune-411005 INDIA
Mahabole, Megha P; School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded-431606
Khairnar, Rajendra S.; School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded-431606
UGC-BSR
 
Uncontrolled Index Term Material Science and semiconductor physics
Semiconductors; Thin films'; Defects; Electrical properties
 
Summary, etc. A wide variety of commercial devices needs conducting/semiconducting metal oxide materials due to their unique combination of high optical transparency and high electrical conductivity. Moreover, induced defects within the host atomic arrangement are fairly responsible for their desirable optical and electrical properties. Therefore, studying the effect of doped ion is essential for better understanding of the behaviour of conducting/semiconducting metal oxides. In this context, influence of fluorine doping on optical and electrical properties of polycrystalline SnO<sub>2</sub> thin films synthesized using sol-gel assisted spin coating method have been investigated in this work. The structural, optical and electronic analysis of pure and F doped SnO<sub>2</sub> thin film indicates major effect of F doping concentration. Based on the electrical measurement these films show semiconducting nature with optical band gap in the range from 2.88 to 3.11 eV with increasing F concentration. These results suggest that F doped SnO<sub>2</sub> thin films are suitable in field of advance electronic or nano-electronic device technology.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2018-10-22 14:42:19
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/19044
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 56, ##issue.no## 10 (2018): Indian Journal of Pure & Applied Physics
 
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