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<strong>Thermoelectric properties of InSe and AlSe bilayer thin films</strong>

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Authentication Code dc
 
Title Statement <strong>Thermoelectric properties of InSe and AlSe bilayer thin films</strong>
 
Added Entry - Uncontrolled Name Boolchandani, Sarita ; Vivekananda Global University, Jaipur
Srivastava, Subodh ; Vivekananda Global University, Jaipur
Vijay, Yogesh Kumar; Vivekananda Global University, Jaipur
 
Uncontrolled Index Term Nanotechnology
Indium selenide; Aluminum selenide; Bilayer thin films; Thermoelectric power
 
Summary, etc. The indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films of different thickness ratio have been prepared using thermal evaporation at vacuum. Thermoelectric behaviour of each sample has been determined temperature regions of 300-310 K. The thermoelectric behaviour of prepared thin films has been found to improve when samples have been annealed in vacuum at 70 ºC and 100 ºC. Electrical studies have been carried out of each film before and after annealing.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2019-02-27 09:40:58
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/20390
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 57, ##issue.no## 2 (2019): Indian Journal of Pure & Applied Physics
 
Language Note en
 
Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/20390/62681
http://op.niscair.res.in/index.php/IJPAP/article/download/20390/63282
http://op.niscair.res.in/index.php/IJPAP/article/download/20390/465474454
http://op.niscair.res.in/index.php/IJPAP/article/download/20390/465474456
 
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