Record Details

Studies of device parameters of nanoscale double gate si and Ge MOSFETs

Shodhganga@INFLIBNET

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Field Value
 
Title Studies of device parameters of nanoscale double gate si and Ge MOSFETs
—
 
Contributor Biswas, Abhijit
 
Subject Device
Double
Gate
Nanoscale
Parameters
 
Description Abstract not available
Data not available
 
Date 2017-07-26T07:22:47Z
2017-07-26T07:22:47Z
n.d.
2011
n.d.
 
Type Ph.D.
 
Identifier http://hdl.handle.net/10603/162903
 
Language English US
 
Relation Reference available at chapters
 
Rights university
 
Format viii, 155p.
31cm.
None
 
Coverage Technology
 
Publisher Kolkata
University of Calcutta
Department of Technology
 
Source University