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Modeling of GaAs Metal Semiconductor Field Effect Transistor Based Photo Detector for Optical Communication

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Title Modeling of GaAs Metal Semiconductor Field Effect Transistor Based Photo Detector for Optical Communication

 
Contributor Mishra B K
 
Subject BSIM Model
EKV Model
GaAs MESFET
MOSFET
Motivation
Photoconductor
Photodetectors
Photogate
PSP Model
 
Description A photodetectors is a solid-state sensor that converts light energy into electrical energy.
newlineAccording to Isaac Newton, light energy consists of small packets or bundles of
newlineparticles called photons. Albert Einstein, who won the Nobel Prize for the discovery
newlineof the photoelectric effect, showed that when these photons hit a metal, they could
newlineexcite electrons in it. The minimum photo energy required to generate (excite) an
newlineelectron is defined as the work function and the number of electrons generated is
newlineproportional to the intensity of the light. The semiconductor photodetectors are made
newlinefrom different semiconductor materials such as silicon, germanium, indium gallium
newlinearsenide, indium antimonide, and mercury cadmium telluride, to name a few. Each
newlinematerial has characteristic bandgap energy (Eg), which determines its light-absorbing
newlinecapabilities. Light is a form of electromagnetic radiation, comprising of different wavelengths (and#955;). The range of light spectrum is split approximately as: ultraviolet (0 400 nm); visible (400 1000 nm); near infrared (1000 3000 nm); medium infrared (3000 6000 nm); far infrared (6000 40,000 nm); extreme infrared (40,000
newline100,000 nm). The equation between bandgap energy (Eg) and cutoff wavelength (and#955;c)
newlineis (eV) nm Eg 1.24X103 and#955;c and#61501; Photodetectors find various applications in fiber-optic communications (800 1600 nm), spectroscopy (400 nm 6000 nm), laser range finding (400 nm 10,600 nm), photon counting (400 nm 1800 nm), and satellite imaging (200 nm 1200 nm), to name only a few topics.
newlineThree kinds of diodes), and (3) photogates are discussed here. Frequently, such detectors need to have high sensitivity, low noise, and high reliability for use in applications.
newline

 
Date 2016-02-12T06:34:43Z
2016-02-12T06:34:43Z
19/07/2009

28/03/2013
 
Type Ph.D.
 
Identifier http://hdl.handle.net/10603/72713
 
Language English
 
Relation
 
Rights university
 
Format

DVD
 
Coverage
 
Publisher Mumbai
Narsee Monjee Institute of Management Studies
Department of Technology Management
 
Source University