ICAR Research Data Repository for Knowledge Management
A study of oxidation mechanism in 4H_SiC for schottky diode fabrication
Shodhganga@INFLIBNET
View Archive Info| Field | Value | |
| Title |
A study of oxidation mechanism in 4H_SiC for schottky diode fabrication
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| Contributor |
Azam, Ameer and Akhtar, Jamil
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| Subject |
Silicaon, Carbide, Achievable, Oxidation, Technologies
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| Description |
Abstract available newline newline Summary p., Bibliography p. 223-231, Appendix p. 167-222 |
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| Date |
2015-12-17T04:16:26Z
2015-12-17T04:16:26Z n.d. 2010 n.d. |
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| Type |
Ph.D.
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| Identifier |
http://hdl.handle.net/10603/59404
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| Language |
English
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| Relation |
-
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| Rights |
university
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| Format |
viii, 171p.
- None |
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| Coverage |
Applied Physics
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| Publisher |
Aligarh
Aligarh Muslim University Department of Applied Physics |
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| Source |
University
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