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<strong>Effect of growth temperature and RF power on structural and optical properties of sputtered deposited PbS thin films</strong>

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Title Statement <strong>Effect of growth temperature and RF power on structural and optical properties of sputtered deposited PbS thin films</strong>
 
Added Entry - Uncontrolled Name Gaur, Jyotshana ; Department of Physics CCS University, Meerut - 250004 (UP) India
Singh, Beer Pal; Department of Physics CCS University, Meerut - 250004 (UP) India
Sharma, Hitesh Kumar; Department of Physics CCS University, Meerut - 250004 (UP) India
Sharma, Sanjeev Kumar; Associate Professor Department of Physics
DST-FIST sponsored project SR/FST/PSI-177/2012
 
Uncontrolled Index Term Condensed Matter Physics
PbS thin films; Growth temperature and RF-power; Structural and optical properties  
 
Summary, etc. Lead sulphide (PbS) nanocrystalline thin films have been grown from sputtering with the variation of growth temperature and RF-Power. The intensity of single dominant peak (200) in XRD-pattern increases by increasing the growth temperature from 175 <sup>o</sup>C to 200 <sup>o</sup>C and RF power from 80 W to 100 W, respectively. The crystallite size and the strain of as-deposited PbS thin films have been calculated from XRD-peak profile analysis. Microscopic surface and cross-section images show the improvement in thin films growth in terms of alignment of grains and thickness. The band gap of PbS thin films has been determined from UV-Vis absorption spectra, where the band gap decreases from 1.98 eV to 1.72 eV as the growth temperature and power increased from 175 °C and 80 W to 200 °C and 100 W.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2019-11-18 12:17:44
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/25616
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 57, ##issue.no## 10 (2019): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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