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<strong>Influence of oxide film surface morphology and thickness on the properties of gas sensitive nanostructure sensor</strong>

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Title Statement <strong>Influence of oxide film surface morphology and thickness on the properties of gas sensitive nanostructure sensor</strong>
 
Added Entry - Uncontrolled Name behzadi, ghobad
Aval, L Fekri
 
Uncontrolled Index Term Nanostructure; Morphology; Sensitive; Thin film
 
Summary, etc. In this study, the gas sensitive metal-oxide semiconductor (MOS) nanostructure sensors based on Ni thin film have been fabricated. The influences of SiO<sub>2</sub> film surface morphology and thickness on the response (R%) and electrical properties of the sensors have been investigated at 150 °C. The surface morphology of the SiO<sub>2</sub> film has been characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The C-V curves of the MOS nanostructure sensors in pure nitrogen and 2 % hydrogen have been reported as well. For the SiO<sub>2</sub> film thicknesses of 14, 65 and 74 nm the measured flat-band voltages (V<sub>FB</sub>) are 0.7, 1.5 and 2 V, respectively. The responses of different sensors in 2% hydrogen for SiO<sub>2</sub> film thicknesses of 14 and 74 nm are 84% and 32%, respectively. The MOS nanostructure sensors exhibited good response to the hydrogen gas, with excellent sensitivity. The MOS nanostructure sensor based on Ni thin film and SiO<sub>2</sub> film thickness of 14 nm shows high response and sensitivity.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2019-11-18 12:17:44
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/20460
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 57, ##issue.no## 10 (2019): Indian Journal of Pure & Applied Physics
 
Language Note en
 
Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/20460/62912
 
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