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A band-selective CMOS low-noise amplifier with current reuse gm boosting technique for 3-5 GHz UWB receivers

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Title A band-selective CMOS low-noise amplifier with current reuse gm boosting technique for 3-5 GHz UWB receivers
 
Creator Shim, Jaemin
Jinwoopark
Jeong, Jichai
 
Subject CMOS
UWB
Low noise amplifier
gm-boosted common-gate amplifier
Current-reuse technique
Dual input matching
Band-selective switching capacitor
 
Description 529-537
The authors have proposed a 3-5 GHz ultra-wideband (UWB) low power and low noise amplifier (LNA) with the TSMC 0.18 μm RF CMOS process, which uses a novel dual input matching network for wideband matching. We have used a current-reuse gm-boosted common-gate topology and shunt-shunt feedback common-source output buffer to improve gain and noise figure with low power dissipation. The proposed dual input matching gm-boosted common-gate LNA has been efficient bandwidth to cover UWB band. It has required less inductors or amplification stages to increase bandwidth as compared with the conventional UWB common-gate LNAs. The broadband input stage has been able to be switched to three frequency bands with capacitive switches. The capacitive switch has replaced a large inductor to resonate at lower frequency band. The band-selective LNA has shown linearity improvement by attenuating the undesired interference of a wideband gain circuit and using less inductors. Simulated performance has shown the gains of 15.9, 17.6, and 16.9 dB, and the noise figures of 3.38, 3.28, and 3.27 dB at the 3.432, 3.960, and 4.488 GHz frequency bands, respectively. The proposed UWB LNA has consumed 5 mW from a 1.8-V power supply.
 
Date 2020-09-23T09:52:09Z
2020-09-23T09:52:09Z
2020-06
 
Type Article
 
Identifier 0975-1017 (Online); 0971-4588 (Print)
http://nopr.niscair.res.in/handle/123456789/55257
 
Language en_US
 
Rights CC Attribution-Noncommercial-No Derivative Works 2.5 India
 
Publisher NISCAIR-CSIR, India
 
Source IJEMS Vol.27(3) [June 2020]