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<strong>Photon irradiation effects on electrical properties of n-ZnO/p-Si junctions for optoelectronic device</strong>

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Title Statement <strong>Photon irradiation effects on electrical properties of n-ZnO/p-Si junctions for optoelectronic device</strong>
 
Added Entry - Uncontrolled Name Patel, Shivangi S; Gujarat University
Mistry, Bhaumik V; Gujarat University
Zinzuvadiya, Sushant ; Gujarat University
Joshi, Utpal S; Gujarat University
 
Uncontrolled Index Term condense matter physics
ZnO; Pulse laser deposition; Photon irradiation; Optoelectronic devices
 
Summary, etc. Simple high energy laser photon irradiation is a handy tool to tune the functional properties of wide band gap oxide-based devices. Present study reports on the effects of laser photon irradiation on electrical transport behaviour of <em>n</em>-ZnO/<em>p</em>-Si <em>p-n</em> junctions. The <em>n-</em>type conductivity of ZnO was optimised by doping of stoichiometric amount of Al in ZnO. The <em>n</em>-ZnO/<em>p</em>-Si junctions were grown on<em> p</em>-Si (100) substrate by pulsed laser deposition. The structural property was analysed by X-ray diffraction. Morphological study was done using atomic force microscopy (AFM) which shows smooth and mono-dispersed surfaces of the <em>p-n</em> junction. The current-voltage (<em>I-V</em>) characteristic of the <em>n</em>-ZnO/<em>p</em>-Si devices have been measured at room temperature in the dark and under illumination. Moreover, the effects of 532 nm visible laser light irradiation on the electric parameter of <em>n</em>-AZO/<em>p</em>-Si <em>p-n</em> junctions were investigated. The characteristic parameters of the junctions such as barrier height, ideality factor and series resistance were determined from the current-voltage measurement. The results show a promise of ZnO based diode structure for its optoelectronic applications.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2020-09-26 12:43:01
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/29070
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 58, ##issue.no## 9 (2020): Indian Journal of Pure & Applied Physics
 
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Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/29070/465489513
http://op.niscair.res.in/index.php/IJPAP/article/download/29070/465489847
 
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