Record Details

<p>Design of Step down Structure RF-MEMS Shunt Capacitive Switch for Low-Pull-In Voltage</p>

Online Publishing @ NISCAIR

View Archive Info
 
 
Field Value
 
Authentication Code dc
 
Title Statement <p>Design of Step down Structure RF-MEMS Shunt Capacitive Switch for Low-Pull-In Voltage</p>
 
Added Entry - Uncontrolled Name Sravani, K Girija; Department of ECE, National Institute of Technology, Silchar 788 010, India
Guha, K ; Department of ECE, National Institute of Technology, Silchar 788 010, India
Lysenko, I E; Department of Electronic Apparatuses Design, Southern Federal University, Taganrog 347 922, Russia
Rao, K Srinivasa; MEMS Research Center, Department of ECE, Koneru Lakshmaih Education Foundation, Green Fields, Vaddeswaram, Guntur 522 502, India
Sinawi, Ameen El; Department of Mechanical Engineering, Khalifa University, Abu Dubai, UAE
 
Uncontrolled Index Term Meander Techniques; Perforations; Pull-in Voltage; RF-MEMS Shunt Switch; Spring Constant
 
Summary, etc. <p>In this paper, designs and simulations of a new RF MEMS step-down structure of a capacitive shunt switch using different meandering methods are presented. The beam and dielectric materials are taken as gold and silicon nitride for the proposed switch. The switch required actuation voltage is 7.9 V for the non-uniform one meander technique.</p>
 
Publication, Distribution, Etc. Journal of Scientific and Industrial Research (JSIR)
2020-11-09 16:10:07
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/JSIR/article/view/40469
 
Data Source Entry Journal of Scientific and Industrial Research (JSIR); ##issue.vol## 79, ##issue.no## 7
 
Language Note en