Record Details

<p>A 128Kb RAM Design with Capacitor-Based Offset Compensation and Double-Diode based Read Assist Circuits at Low V<sub>DD</sub><strong></strong></p>

Online Publishing @ NISCAIR

View Archive Info
 
 
Field Value
 
Authentication Code dc
 
Title Statement <p>A 128Kb RAM Design with Capacitor-Based Offset Compensation and Double-Diode based Read Assist Circuits at Low V<sub>DD</sub><strong></strong></p>
 
Added Entry - Uncontrolled Name Yamani, Sudha Vani; Department of Electronics and Communication Engineering, Vignan’s Foundation for Science, Technology & Research, Vadlamudi, Guntur, Andhra Pradesh 522 213
Rani, N Usha; Department of Electronics and Communication Engineering, Vignan’s Foundation for Science, Technology & Research, Vadlamudi, Guntur, Andhra Pradesh 522 213
Vaddi, Ramesh ; Department of Electronics and Communication, School of Engineering and Applied Sciences, SRM University, Amaravati, Guntur 522 502, Andhra Pradesh, India
 
Uncontrolled Index Term Current-controlled sense amplifier (CCSA); Offset cancellation; RSNM; SRAM; WLUD
 
Summary, etc. <p class="Abstract" style="text-align: justify;"><span lang="EN-GB">Low power static random access memory (SRAM) takes significant portion of area on chip in all modern SOCs and emerging Computing-in-memory applications for edge devices in IoT. This work proposes novel readability assist with the double-diode based word line under drive (WLUD) has been effective improving the read-static noise-margin (RSNM) by 26–46%and proposed a capacitor based current controlled sense amplifier offset compensation scheme. This scheme achieves 4X reduction in standard deviation of offset voltage over conventional sense amplifier design with 1.1% and 2.9% of area, power overheads respectively with 90 nm CMOS technology at 0.5–1.0 V supply voltages.</span></p><br />
 
Publication, Distribution, Etc. Journal of Scientific and Industrial Research (JSIR)
2020-11-09 17:14:07
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/JSIR/article/view/41677
 
Data Source Entry Journal of Scientific and Industrial Research (JSIR); ##issue.vol## 79, ##issue.no## 9 (20)
 
Language Note en