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<strong>I – V characterization of vacuum deposited zinc selenide – silicon hetero junction</strong>

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Title Statement <strong>I – V characterization of vacuum deposited zinc selenide – silicon hetero junction</strong>
 
Added Entry - Uncontrolled Name Mahesha, M.G ; Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104, Karnataka, India
Keshav, Rashmitha ; Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education 576 104, India
Shettya, P K; Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education 576 104, India
Rajeshwari, M ; Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education 576 104, India
VGST, Govt. of Karnataka State India (VGST/K-FIST(L1)/GRD-377/2014-15)
 
Uncontrolled Index Term Condensed matter physics; semiconductors; thin films
Chalcogenides; thin films; hetero-structure; Thermionic emission; Cheung model
 
Summary, etc. Zinc selenide (ZnSe) thin films were grown on silicon (Si) wafer by thermal evaporation and the hetero-structure was subjected to annealing at various temperatures. X-ray diffractogram recorded for various samples were analysed to extract the structural information including crystallite size, strain and dislocation density. ZnSe films exhibited cubic structure with (111) orientation and the crystallite size has increased from about 21 nm to 43 nm upon annealing at 673 K. Annealing at temperature above this has degraded the films. I – V characterization has shown nonlinear relation and affected by post deposition annealing. Thermionic emission and Cheung models were applied to obtain various parameters that assess the performance of hetero-structured devices. Minimum ideality factor was observed (n = 1.75 from Cheung Model) for as deposited system and it increased after annealing. Analysis has proven that series resistance increases after annealing under air ambience
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2020-11-20 15:01:11
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/25220
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 58, ##issue.no## 12 (2020): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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