<strong>I – V characterization of vacuum deposited zinc selenide – silicon hetero junction</strong>
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Title Statement |
<strong>I – V characterization of vacuum deposited zinc selenide – silicon hetero junction</strong> |
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Added Entry - Uncontrolled Name |
Mahesha, M.G ; Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104, Karnataka, India Keshav, Rashmitha ; Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education 576 104, India Shettya, P K; Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education 576 104, India Rajeshwari, M ; Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education 576 104, India VGST, Govt. of Karnataka State India (VGST/K-FIST(L1)/GRD-377/2014-15) |
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Uncontrolled Index Term |
Condensed matter physics; semiconductors; thin films Chalcogenides; thin films; hetero-structure; Thermionic emission; Cheung model |
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Summary, etc. |
Zinc selenide (ZnSe) thin films were grown on silicon (Si) wafer by thermal evaporation and the hetero-structure was subjected to annealing at various temperatures. X-ray diffractogram recorded for various samples were analysed to extract the structural information including crystallite size, strain and dislocation density. ZnSe films exhibited cubic structure with (111) orientation and the crystallite size has increased from about 21 nm to 43 nm upon annealing at 673 K. Annealing at temperature above this has degraded the films. I – V characterization has shown nonlinear relation and affected by post deposition annealing. Thermionic emission and Cheung models were applied to obtain various parameters that assess the performance of hetero-structured devices. Minimum ideality factor was observed (n = 1.75 from Cheung Model) for as deposited system and it increased after annealing. Analysis has proven that series resistance increases after annealing under air ambience |
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Publication, Distribution, Etc. |
Indian Journal of Pure & Applied Physics (IJPAP) 2020-11-20 15:01:11 |
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Electronic Location and Access |
application/pdf http://op.niscair.res.in/index.php/IJPAP/article/view/25220 |
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Data Source Entry |
Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 58, ##issue.no## 12 (2020): Indian Journal of Pure & Applied Physics |
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Language Note |
en |
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