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Simulation of the process variation in negative capacitance virtual-source carbon nanotube FET devices and circuits

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Title Simulation of the process variation in negative capacitance virtual-source carbon nanotube FET devices and circuits
 
Creator Muthu, Bharathi Raj
Solomon, Ewins Pon Pushpa
Dhandapani, Vaithiyanathan
 
Subject Carbon nanotube field effect transistors
Ferroelectric
Negative capacitance
Short channel effects
 
Description 916-920
We have reported the impact of process variation of virtual- source carbon nanotube field-effect transistor (VS-CNFET) device externally connected to the epitaxial ferroelectric (FE) capacitor through the spectre parametric simulation. We have found that the FE materials with high remnant polarization produces better transfer characteristics and suppressed short channel effects (SCE). The increase in the ferroelectric thickness (tfe) has brought out the good impact of 4x improvement in ON current and reduced subthreshold swing of 40 mV/decade. The ON current has been increased with increase in thickness of ferroelectric material and has followed a monotonic trend, where the leakage current becomes a major concern and optimization of crucial parameters such as a diameter of the nanotube has given importance. Relative to the VS- CNFET model, the negative capacitance VS-CNFET model has stacked in ring oscillator (RO) displays immune to delay variation and produces better switching characteristics.
 
Date 2020-11-24T08:23:46Z
2020-11-24T08:23:46Z
2020-08
 
Type Article
 
Identifier 0975-1017 (Online); 0971-4588 (Print)
http://nopr.niscair.res.in/handle/123456789/55675
 
Language en_US
 
Rights CC Attribution-Noncommercial-No Derivative Works 2.5 India
 
Publisher NISCAIR-CSIR, India
 
Source IJEMS Vol.27(4) [August 2020]