Record Details

<strong>Experimental study of neutron irradiation effect on elementary semiconductor devices using Am-Be neutron source</strong>

Online Publishing @ NISCAIR

View Archive Info
 
 
Field Value
 
Authentication Code dc
 
Title Statement <strong>Experimental study of neutron irradiation effect on elementary semiconductor devices using Am-Be neutron source</strong>
 
Added Entry - Uncontrolled Name Swami, H.L. ; Institute for Plasma Research
Rathod, Rajat ; Pandit Deendayal Petroleum University, Gandhinagar, Gujarat, India
Rao, T Srinivas; Institute for Plasma Research
Abhangi, M ; Institute for Plasma Research
Vala, S ; Institute of Plasma Research , Homi Bhabha National Institute
Danani, C ; Institute of Plasma Research, Homi Bhabha National Institute
Chaudhuri, P ; Institute of Plasma Research, Homi Bhabha National Institute
Srinivasan, R ; Institute of Plasma Research, Homi Bhabha National Institute
 
Uncontrolled Index Term Neutron; Radiation effect; Am-Be Source; Semiconductor device; Integrated Circuits
 
Summary, etc. An experiment has been conducted to evaluate the lifetime, reliability and operational performance of elementary semiconductor devices in the neutron radiation environment which supports to reduce the fatal in measurements and plan the preventive actions in nuclear facilities. It will also support the enhancement of electronics for nuclear facilities. The elementary semiconductor devices used in the experiment are Diode (1n4007), Zener Diode (5.1v), Light Emitting Diode, Transistor (BC547, 2n3904), Voltage controlling IC (7805), Operational Amplifier (LM741) and Optocoupler (4n35). The selection of devices has been made by keeping in mind their application in transmitting devices (i.e. Temperature transmitter, pressure transmitter, flow transmitter, monitors and controllers) for Indian test blanket system in ITER. Such devices are also used in general nuclear electronics. The devices have been irradiated in the Am-Be neutron source environment. The maximum fluence has been given up to 10<sup>11</sup> n/cm<sup>2</sup>. The neutron source has energy range from low to high. All semiconductor devices have been characterized before and after irradiations. The deviation of 5 - 10% is observed in diodes I-V characteristics whereas transistors show a bit higher deflection in basic functionality. Optocoupler shows more than 50% deviation in its basic characteristics whereas voltage-controlling IC is not even functioning after the irradiation of 10<sup>11</sup> n/cm<sup>2</sup>. The paper describes the details of the experiment and the behavior of semiconductor devices after irradiation. The experiment supports the selection and further research of the Indian test blanket system instruments.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2021-01-08 10:02:07
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/36249
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 59, ##issue.no## 1 (2021): Indian Journal of Pure & Applied Physics
 
Language Note en
 
Terms Governing Use and Reproduction Note Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India © 2015. The Council of Scientific &amp; Industrial Research, New Delhi.