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Droop reduction in ZnO/GaN Hybrid Light Emitting Diodes

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Title Droop reduction in ZnO/GaN Hybrid Light Emitting Diodes
 
Creator Chaudhri, Aadarsh Kumar
Joshi, B C
Devi, Vanita
Singh, Mahipal
 
Subject ZnO
GaN
p-n
Light Emitting Diode
Droop
 
Description 335-338
PN junction is the basic building block for the fabrication of optoelectronic devices. ZnO shows the n-type behaviour.
P-type doping with suitable hole concentration and reduced defects is one of the major challenges in the fabrication of ZnO based devices. Nitrogen, Phosphorus, Arsenic and Bismuth are some of the potential p-type dopants, but none of them have desired electrical properties to fabricate p-n junction from ZnO. In the present work, we proposed a hybrid n-ZnO/p-GaN hetero-structure, in which n-type ZnO film is placed on Mg doped GaN film. Simulation results revealed that the electroluminescence intensities increases in hybrid LED structure and there is a strong sensitivity towards the layer properties in hybrid structure.
 
Date 2021-04-01T10:52:20Z
2021-04-01T10:52:20Z
2021-04
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscair.res.in/handle/123456789/56599
 
Language en_US
 
Rights CC Attribution-Noncommercial-No Derivative Works 2.5 India
 
Publisher NISCAIR-CSIR, India
 
Source IJPAP Vol.59(04) [April 2021]