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Cu-Cu thermo compression wafer bonding techniques for micro-system integration

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Title Cu-Cu thermo compression wafer bonding techniques for micro-system integration
 
Creator Agrawal, Megha
Manohar, Bottumanchi Morish
Nagarajaiah, Kusuma
 
Subject Thermocompression bonding
Surface treatment
Surface passivation
Formic acid vapour treatment
 
Description 142-151
Copper (Cu) is used as an interconnect material in many applications owing to its high thermal, electrical conductivity
and excellent electromigration resistance. Though this material has many advantages, the main drawback is that it gets
oxidized on exposure to air. Thermo-compression bonding is a wafer bonding technique that uses metal layers for heaping
wafers, which aids in attaining outstanding electrical conductivity without weakening the mechanical properties. The
adsorbed oxide layer hurdles the proper bonding to happen between the wafers. In order to enhance the diffusion between
the metal layers, the copper oxide layer should be removed which necessitates the requirement of high temperature,
pressure, long bonding time and the inert gas atmosphere throughout the Cu-Cu thermo compression wafer bonding process.
Simultaneous application of high temperature and pressure for a long time leads to the deterioration of the underlying
sensitive components. This paper aims to present several techniques such as surface treatment, chemical pretreatment,
surface passivation, crystal orientation modification, stress gradient in the thin film and formic acid vapour treatment which
are used in order to avoid the deterioration of underlying sensitive devices and to obtain a proper bonding between the
wafers at low temperature and pressure.
 
Date 2021-07-07T06:35:52Z
2021-07-07T06:35:52Z
2021-04
 
Type Article
 
Identifier 0975-1017 (Online); 0971-4588 (Print)
http://nopr.niscair.res.in/handle/123456789/57659
 
Language en
 
Publisher CSIR-NIScPR, India
 
Source IJEMS Vol.28(2) [April 2021]