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<p><strong>Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs</strong></p>

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Title Statement <p><strong>Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs</strong></p>
 
Added Entry - Uncontrolled Name Kalita, Sanjib ; Department of Electronics and Communication Engineering, Rajeev Gandhi Memorial College of Engineering and Technology
Dutta, Avrajyoti ; Department of Electronics and Communication Engineering, National Institute of Technology Arunachal Pradesh
Mukhopadhyay, Subhadeep ; Department of Electronics and Communication Engineering, National Institute of Technology Arunachal Pradesh
NA
 
Uncontrolled Index Term Electronics; Semiconductor Devices
Quantum well; Atomic layer; Doping concentration; Transconductance; Cut-off frequency
 
Summary, etc. In this work, a structural optimisation is performed on the basis of DC and RF performances of high electron mobility transistors (HEMTs) in nano-scale regime by simulation results obtained from SILVACO-ATLAS physical simulator. The formation of quantum well is demonstrated at unbiased condition in each type of these HEMT structures. In DC analysis of each structure, the variations in drain current are studied with respect to drain voltage, gate voltage and doping concentration. Also, the variations in transconductance are studied with gate voltage and doping concentration corresponding to each structure. In RF analysis, the variations in current gain cut-off frequency and power gain cut-off frequency are studied with gate voltage and doping concentration corresponding to each structure. The DC and RF performances are observed to be the highest for modified HEMT structure with inserted InN atomic layer (0.36 nm thick) having AlGaN doping concentration of 4×10<sup>18</sup> cm<sup>-3</sup> among all designed structures in this work. To investigate the effect of doping concentration on DC and RF performances in nano-scale regime is one novelty in this work. Our work may be helpful in the applications related to biomedical sensors. Also, our work may be suitable for high frequency applications.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2021-09-16 16:36:59
 
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http://op.niscair.res.in/index.php/IJPAP/article/view/48432
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 59, ##issue.no## 9 (2021): Indian Journal of Pure & Applied Physics
 
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Nonspecific Relationship Entry http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556883
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556884
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556885
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556886
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556887
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556888
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556889
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556890
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556891
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556893
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556894
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556895
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http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556900
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http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556906
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556908
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556910
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556911
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556912
http://op.niscair.res.in/index.php/IJPAP/article/download/48432/465556913
 
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