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Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs

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Title Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs
 
Creator Kalita, Sanjib
Dutta, Avrajyoti
Mukhopadhyay, Subhadeep
 
Subject Quantum well
Atomic layer
Doping concentration
Transconductance
Cut-off frequency
 
Description 619-628
In this work, a structural optimisation is performed on the basis of DC and RF performances of high electron mobility
transistors (HEMTs) in nano-scale regime by simulation results obtained from SILVACO-ATLAS physical simulator. The
formation of quantum well is demonstrated at unbiased condition in each type of these HEMT structures. In DC analysis of
each structure, the variations in drain current are studied with respect to drain voltage, gate voltage and doping
concentration. Also, the variations in transconductance are studied with gate voltage and doping concentration
corresponding to each structure. In RF analysis, the variations in current gain cut-off frequency and power gain cut-off
frequency are studied with gate voltage and doping concentration corresponding to each structure. The DC and RF
performances are observed to be the highest for modified HEMT structure with inserted InN atomic layer (0.36 nm thick)
having AlGaN doping concentration of 4×1018 cm-3 among all designed structures in this work. To investigate the effect of
doping concentration on DC and RF performances in nano-scale regime is one novelty in this work. Our work may be
helpful in the applications related to biomedical sensors. Also, our work may be suitable for high frequency applications.
 
Date 2021-09-23T11:34:19Z
2021-09-23T11:34:19Z
2021-09
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscair.res.in/handle/123456789/58133
 
Language en
 
Publisher NIScPR-CSIR, India
 
Source IJPAP Vol.59(09) [September 2021]