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<strong>A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection</strong>

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Title Statement <strong>A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection</strong>
 
Added Entry - Uncontrolled Name Kalita, Sanjib ; Rajeev Gandhi Memorial College of Engineering and Technology
Mallikarjuna, Kethepalli ; Rajeev Gandhi Memorial College of Engineering and Technology
 
Uncontrolled Index Term Electronics; Semiconductor Devices
Protein, Dielectric constant, Transconductance, Sensitivity, Drain current
 
Summary, etc. In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. Conduction band engineering of the biosensor is studied. DC and RF properties of the designed biosensor are studied. Sensitivity of the biosensor is studied corresponding to electric field, surface potential, drain current, transconductance, and current gain cut-off frequency. Sufficient sensitivity is obtained corresponding to each electrical parameter to detect the virus-protein. This work may be helpful to design and experimentally fabricate the HEMT based biosensor.
 
Publication, Distribution, Etc. Indian Journal of Pure & Applied Physics (IJPAP)
2022-02-16 10:24:46
 
Electronic Location and Access application/pdf
http://op.niscair.res.in/index.php/IJPAP/article/view/54619
 
Data Source Entry Indian Journal of Pure & Applied Physics (IJPAP); ##issue.vol## 60, ##issue.no## 2 (2022): Indian Journal of Pure & Applied Physics
 
Language Note en
 
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